| 品牌 | 台产/MATSUKI松木 | 批号 | 21+ |
| 封装 | SOT-23 | 仓库 |
N-Channel 30V (D-S)MOSFET
ME2306AS/ME2306AS-G
01
Parameter Symbol Maximum Ratings Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current
TA=25℃
ID
5.3
TA=70℃ 4.3 A
Pulsed Drain Current IDM 21.5
Maximum Power Dissipation
TA=25℃
PD
1.3
W
TA=70℃ 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ℃
Thermal Resistance-Junction to Ambient* RθJA 90 ℃/W
GENERAL DESCRIPTION
The ME2306AS is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology.This high density process is especially tailored to
minimize on-state resistance.These devices are particularly suited for
low voltage application such as cellular phone, notebook computer
power management and other battery powered circuits, and low
in-line power loss that are needed in a very small outline surface
mount package.
FEATURES
● RDS(ON)≦34.5mΩ@VGS=10V
● RDS(ON)≦38mΩ@VGS=4.5V
● RDS(ON)≦50mΩ@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter