公司信息

  • 联系人: 陈先生
  • 洽洽:
  • 所在地: 深圳市 福田区
  • 会员年限: 会员18
  • 实体认证: 已认证(2023-03-03)
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深圳市森博能电子科技有限公司

主营产品 : 奥伦德 | 南京微盟 | 纳芯微 | 富满

AO3400/ME2306AS-G

Datasheet
台湾松木直代替5.8A
IC
台产/MATSUKI松木
SOT-23
21+
2600000
发布日期
QQ询价
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深圳市森博能电子科技有限公司
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  • 会员年限: 会员18
  • 实体认证: 已认证
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产品属性
品牌 台产/MATSUKI松木 批号 21+
封装 SOT-23 仓库
产品详情        产品说明书
  • N-Channel 30V (D-S)MOSFET

    ME2306AS/ME2306AS-G

    01

    Parameter Symbol Maximum Ratings Unit

    Drain-Source Voltage VDS 30 V

    Gate-Source Voltage VGS ±12 V

    Continuous Drain Current

    TA=25℃

    ID

    5.3

    TA=70℃ 4.3 A

    Pulsed Drain Current IDM 21.5

    Maximum Power Dissipation

    TA=25℃

    PD

    1.3

    W

    TA=70℃ 0.8

    Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 ℃

    Thermal Resistance-Junction to Ambient* RθJA 90 ℃/W

    GENERAL DESCRIPTION

    The ME2306AS is the N-Channel logic enhancement mode power

    field effect transistors, using high cell density, DMOS trench

    technology.This high density process is especially tailored to

    minimize on-state resistance.These devices are particularly suited for

    low voltage application such as cellular phone, notebook computer

    power management and other battery powered circuits, and low

    in-line power loss that are needed in a very small outline surface

    mount package.

    FEATURES

    ● RDS(ON)≦34.5mΩ@VGS=10V

    ● RDS(ON)≦38mΩ@VGS=4.5V

    ● RDS(ON)≦50mΩ@VGS=2.5V

    ● Super high density cell design for extremely low RDS(ON)

    ● Exceptional on-resistance and maximum DC current

    capability

    APPLICATIONS

    ● Power Management in Note book

    ● Portable Equipment

    ● Battery Powered System

    ● DC/DC Converter

    ● Load Switch

    ● DSC

    ● LCD Display inverter


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